ZXMN10B08E6TA Pricing (USD) [272776pcs Stock]
- 1 pcs$0.13560
- 3,000 pcs$0.12049
- Part Number:
- ZXMN10B08E6TA
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 100V 1.6A SOT23-6.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays and Diodes - Rectifiers - Arrays ...
- Competitive Advantage:
- We specialize in Diodes Incorporated ZXMN10B08E6TA electronic components. ZXMN10B08E6TA can be shipped within 24 hours after order. If you have any demands for ZXMN10B08E6TA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN10B08E6TA Product Attributes
Part Number :
ZXMN10B08E6TA
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 100V 1.6A SOT23-6
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.3V, 10V
Rds On (Max) @ Id, Vgs :
230 mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
9.2nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
497pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
1.1W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-26
Package / Case :
SOT-23-6
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