SQM60030E_GE3 Pricing (USD) [44745pcs Stock]
- 1 pcs$0.87385
- 800 pcs$0.78645
- Part Number:
- SQM60030E_GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 80V 120A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Special Purpose, Diodes - Bridge Rectifiers, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Single, Power Driver Modules and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SQM60030E_GE3 electronic components. SQM60030E_GE3 can be shipped within 24 hours after order. If you have any demands for SQM60030E_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQM60030E_GE3 Product Attributes
Part Number :
SQM60030E_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 80V 120A D2PAK
Series :
Automotive, AEC-Q101, TrenchFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
165nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
12000pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
375W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D²PAK (TO-263)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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