[2619pcs Stock]
- Part Number:
- GP1M010A080N
- Manufacturer:
- Global Power Technologies Group
- Detailed description:
- MOSFET N-CH 900V 10A TO3PN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Special Purpose, Diodes - Rectifiers - Single and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Global Power Technologies Group GP1M010A080N electronic components. GP1M010A080N can be shipped within 24 hours after order. If you have any demands for GP1M010A080N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GP1M010A080N Product Attributes
Part Number :
GP1M010A080N
Manufacturer :
Global Power Technologies Group
Description :
MOSFET N-CH 900V 10A TO3PN
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
900V
Current - Continuous Drain (Id) @ 25°C :
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.05 Ohm @ 5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
53nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2336pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
312W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-3PN
Package / Case :
TO-3P-3, SC-65-3
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