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Microsemi Corporation - APTM100DSK35T3G

KEY Part #: K6522618

APTM100DSK35T3G Pricing (USD) [1598pcs Stock]

  • 1 pcs$27.22101
  • 100 pcs$27.08558
Part Number:
APTM100DSK35T3G
Manufacturer:
Microsemi Corporation
Detailed description:
MOSFET 2N-CH 1000V 22A SP3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Diodes - Rectifiers - Arrays, Transistors - Special Purpose, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in Microsemi Corporation APTM100DSK35T3G electronic components. APTM100DSK35T3G can be shipped within 24 hours after order. If you have any demands for APTM100DSK35T3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM100DSK35T3G Product Attributes

Part Number : APTM100DSK35T3G
Manufacturer : Microsemi Corporation
Description : MOSFET 2N-CH 1000V 22A SP3
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C : 22A
Rds On (Max) @ Id, Vgs : 420 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 5200pF @ 25V
Power - Max : 390W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP3
Supplier Device Package : SP3

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