Part Number :
NTMD6601NR2G
Manufacturer :
ON Semiconductor
Description :
MOSFET 2N-CH 80V 1.1A 8SOIC
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
1.1A
Rds On (Max) @ Id, Vgs :
215 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 25V
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package :
8-SOIC