Vishay Siliconix - SIR696DP-T1-GE3

KEY Part #: K6419935

SIR696DP-T1-GE3 Pricing (USD) [145657pcs Stock]

  • 1 pcs$0.25393
  • 3,000 pcs$0.23845

Part Number:
SIR696DP-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 125V 60A POWERPAKSO.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Thyristors - DIACs, SIDACs, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in Vishay Siliconix SIR696DP-T1-GE3 electronic components. SIR696DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIR696DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIR696DP-T1-GE3 Product Attributes

Part Number : SIR696DP-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 125V 60A POWERPAKSO
Series : ThunderFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 125V
Current - Continuous Drain (Id) @ 25°C : 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 7.5V, 10V
Rds On (Max) @ Id, Vgs : 11.5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1410pF @ 75V
FET Feature : -
Power Dissipation (Max) : 104W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® SO-8
Package / Case : PowerPAK® SO-8

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