IXFH80N65X2 Pricing (USD) [8424pcs Stock]
- 1 pcs$5.38095
- 10 pcs$4.84285
- 100 pcs$3.98190
- 500 pcs$3.33619
- Part Number:
- IXFH80N65X2
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 650V 80A TO-247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Arrays, Transistors - IGBTs - Single and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in IXYS IXFH80N65X2 electronic components. IXFH80N65X2 can be shipped within 24 hours after order. If you have any demands for IXFH80N65X2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH80N65X2 Product Attributes
Part Number :
IXFH80N65X2
Manufacturer :
IXYS
Description :
MOSFET N-CH 650V 80A TO-247
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
40 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
143nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
8245pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
890W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247
Package / Case :
TO-247-3
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