IRF7665S2TRPBF Pricing (USD) [181600pcs Stock]
- 1 pcs$0.47950
- 4,800 pcs$0.47711
- Part Number:
- IRF7665S2TRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 100V DIRECTFET SB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Transistors - IGBTs - Modules, Diodes - Zener - Single and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF7665S2TRPBF electronic components. IRF7665S2TRPBF can be shipped within 24 hours after order. If you have any demands for IRF7665S2TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7665S2TRPBF Product Attributes
Part Number :
IRF7665S2TRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V DIRECTFET SB
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
4.1A (Ta), 14.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
62 mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id :
5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
515pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
2.4W (Ta), 30W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DIRECTFET SB
Package / Case :
DirectFET™ Isometric SB
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