IRFU3410PBF Pricing (USD) [84252pcs Stock]
- 1 pcs$0.54353
- 10 pcs$0.48081
- 100 pcs$0.37997
- 500 pcs$0.27872
- 1,000 pcs$0.22005
- Part Number:
- IRFU3410PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 100V 31A I-PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - Modules, Transistors - JFETs, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFU3410PBF electronic components. IRFU3410PBF can be shipped within 24 hours after order. If you have any demands for IRFU3410PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFU3410PBF Product Attributes
Part Number :
IRFU3410PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 31A I-PAK
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
39 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1690pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3W (Ta), 110W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
IPAK (TO-251)
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
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