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  5. FQB34P10TM

ON Semiconductor - FQB34P10TM

KEY Part #: K6405841

FQB34P10TM Pricing (USD) [65033pcs Stock]

  • 1 pcs$0.60124
  • 800 pcs$0.58373
Part Number:
FQB34P10TM
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET P-CH 100V 33.5A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Arrays and Diodes - RF ...
Competitive Advantage:
We specialize in ON Semiconductor FQB34P10TM electronic components. FQB34P10TM can be shipped within 24 hours after order. If you have any demands for FQB34P10TM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQB34P10TM Product Attributes

Part Number : FQB34P10TM
Manufacturer : ON Semiconductor
Description : MOSFET P-CH 100V 33.5A D2PAK
Series : QFET®
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 33.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 60 mOhm @ 16.75A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 2910pF @ 25V
FET Feature : -
Power Dissipation (Max) : 3.75W (Ta), 155W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D²PAK (TO-263AB)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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