IRLR2908TRPBF Pricing (USD) [160171pcs Stock]
- 1 pcs$0.23092
- 2,000 pcs$0.19734
- Part Number:
- IRLR2908TRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 80V 30A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Diodes - Rectifiers - Single and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRLR2908TRPBF electronic components. IRLR2908TRPBF can be shipped within 24 hours after order. If you have any demands for IRLR2908TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLR2908TRPBF Product Attributes
Part Number :
IRLR2908TRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 80V 30A DPAK
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
28 mOhm @ 23A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 4.5V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
1890pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
120W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D-Pak
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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