[3283pcs Stock]
- Part Number:
- MVB50P03HDLT4G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- INTEGRATED CIRCUIT.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Bridge Rectifiers, Diodes - RF and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in ON Semiconductor MVB50P03HDLT4G electronic components. MVB50P03HDLT4G can be shipped within 24 hours after order. If you have any demands for MVB50P03HDLT4G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MVB50P03HDLT4G Product Attributes
Part Number :
MVB50P03HDLT4G
Manufacturer :
ON Semiconductor
Description :
INTEGRATED CIRCUIT
Series :
Automotive, AEC-Q101
Part Status :
Obsolete
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
100nC @ 5V
Vgs (Max) :
±15V
Input Capacitance (Ciss) (Max) @ Vds :
4.9nF @ 25V
FET Feature :
-
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK-3
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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