SI3442BDV-T1-E3 Pricing (USD) [414912pcs Stock]
- 1 pcs$0.08915
- 3,000 pcs$0.08025
- Part Number:
- SI3442BDV-T1-E3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 20V 3A 6-TSOP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Single, Transistors - Programmable Unijunction and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI3442BDV-T1-E3 electronic components. SI3442BDV-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI3442BDV-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3442BDV-T1-E3 Product Attributes
Part Number :
SI3442BDV-T1-E3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 20V 3A 6-TSOP
Series :
TrenchFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
57 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id :
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
5nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
295pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
860mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
6-TSOP
Package / Case :
SOT-23-6 Thin, TSOT-23-6
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