Diodes Incorporated - BSS123WQ-7-F

KEY Part #: K6420201

BSS123WQ-7-F Pricing (USD) [1370277pcs Stock]

  • 1 pcs$0.02699
  • 3,000 pcs$0.02502

Part Number:
BSS123WQ-7-F
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 100V 0.17A SOT323.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Diodes - Zener - Single, Thyristors - TRIACs, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Diodes Incorporated BSS123WQ-7-F electronic components. BSS123WQ-7-F can be shipped within 24 hours after order. If you have any demands for BSS123WQ-7-F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSS123WQ-7-F Product Attributes

Part Number : BSS123WQ-7-F
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 100V 0.17A SOT323
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6 Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
FET Feature : -
Power Dissipation (Max) : 200mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-323
Package / Case : SC-70, SOT-323