BSZ0901NSIATMA1 Pricing (USD) [176341pcs Stock]
- 1 pcs$0.20975
- Part Number:
- BSZ0901NSIATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 30V 40A TSDSON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Pre-Biased, Power Driver Modules, Diodes - Bridge Rectifiers and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies BSZ0901NSIATMA1 electronic components. BSZ0901NSIATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ0901NSIATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ0901NSIATMA1 Product Attributes
Part Number :
BSZ0901NSIATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 30V 40A TSDSON
Series :
OptiMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
25A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.1 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2600pF @ 15V
FET Feature :
Schottky Diode (Body)
Power Dissipation (Max) :
2.1W (Ta), 69W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TSDSON-8-FL
Package / Case :
8-PowerTDFN
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