STW30NM60N Pricing (USD) [8524pcs Stock]
- 1 pcs$4.83448
- 10 pcs$4.35191
- 100 pcs$3.57835
- Part Number:
- STW30NM60N
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 600V 25A TO-247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - RF, Transistors - Special Purpose, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge Rectifiers and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in STMicroelectronics STW30NM60N electronic components. STW30NM60N can be shipped within 24 hours after order. If you have any demands for STW30NM60N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STW30NM60N Product Attributes
Part Number :
STW30NM60N
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 600V 25A TO-247
Series :
MDmesh™ II
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
130 mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
91nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
190W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247-3
Package / Case :
TO-247-3
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