DMG4N60SJ3 Pricing (USD) [141355pcs Stock]
- 1 pcs$0.26297
- 75 pcs$0.26166
- Part Number:
- DMG4N60SJ3
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET NCH 600V 3A TO251.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - JFETs, Transistors - Programmable Unijunction and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMG4N60SJ3 electronic components. DMG4N60SJ3 can be shipped within 24 hours after order. If you have any demands for DMG4N60SJ3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG4N60SJ3 Product Attributes
Part Number :
DMG4N60SJ3
Manufacturer :
Diodes Incorporated
Description :
MOSFET NCH 600V 3A TO251
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.5 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
14.3nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
532pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
41W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-251
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
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