DMG9N65CT Pricing (USD) [65693pcs Stock]
- 1 pcs$0.26103
- 50 pcs$0.21713
- 100 pcs$0.17722
- 500 pcs$0.14009
- 1,000 pcs$0.11207
- Part Number:
- DMG9N65CT
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 650V 9A TO220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Single, Diodes - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF, Power Driver Modules and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMG9N65CT electronic components. DMG9N65CT can be shipped within 24 hours after order. If you have any demands for DMG9N65CT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG9N65CT Product Attributes
Part Number :
DMG9N65CT
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 650V 9A TO220AB
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.3 Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
39nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2310pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
165W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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