Diodes Incorporated - ZXMN6A08GTA

KEY Part #: K6417352

ZXMN6A08GTA Pricing (USD) [287227pcs Stock]

  • 1 pcs$0.12942
  • 1,000 pcs$0.12877

Part Number:
ZXMN6A08GTA
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 60V 3.8A SOT223.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Transistors - Special Purpose, Transistors - JFETs, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Bridge Rectifiers and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Diodes Incorporated ZXMN6A08GTA electronic components. ZXMN6A08GTA can be shipped within 24 hours after order. If you have any demands for ZXMN6A08GTA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMN6A08GTA Product Attributes

Part Number : ZXMN6A08GTA
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 60V 3.8A SOT223
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 80 mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 5.8nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 459pF @ 40V
FET Feature : -
Power Dissipation (Max) : 2W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-223
Package / Case : TO-261-4, TO-261AA

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