Diodes Incorporated - DMTH6004SCTB-13

KEY Part #: K6409109

DMTH6004SCTB-13 Pricing (USD) [65432pcs Stock]

  • 1 pcs$0.59758
  • 800 pcs$0.53591

Part Number:
DMTH6004SCTB-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Diodes - Rectifiers - Single, Transistors - Special Purpose, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Diodes - RF and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in Diodes Incorporated DMTH6004SCTB-13 electronic components. DMTH6004SCTB-13 can be shipped within 24 hours after order. If you have any demands for DMTH6004SCTB-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMTH6004SCTB-13 Product Attributes

Part Number : DMTH6004SCTB-13
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH
Series : Automotive, AEC-Q101
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.4 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 95.4nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4556pF @ 30V
FET Feature : -
Power Dissipation (Max) : 4.7W (Ta), 136W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263AB
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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