Diodes Incorporated - DMNH6021SK3Q-13

KEY Part #: K6403229

DMNH6021SK3Q-13 Pricing (USD) [236821pcs Stock]

  • 1 pcs$0.15618
  • 2,500 pcs$0.13878

Part Number:
DMNH6021SK3Q-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET NCH 60V 50A TO252.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Thyristors - SCRs - Modules, Diodes - RF, Diodes - Bridge Rectifiers, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Diodes Incorporated DMNH6021SK3Q-13 electronic components. DMNH6021SK3Q-13 can be shipped within 24 hours after order. If you have any demands for DMNH6021SK3Q-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMNH6021SK3Q-13 Product Attributes

Part Number : DMNH6021SK3Q-13
Manufacturer : Diodes Incorporated
Description : MOSFET NCH 60V 50A TO252
Series : Automotive, AEC-Q101
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 23 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20.1nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1143pF @ 25V
FET Feature : -
Power Dissipation (Max) : 2.1W (Ta)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252-4L
Package / Case : TO-252-5, DPak (4 Leads + Tab), TO-252AD