IPB60R165CPATMA1 Pricing (USD) [37895pcs Stock]
- 1 pcs$1.03181
- Part Number:
- IPB60R165CPATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 600V 21A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Diodes - Rectifiers - Single, Thyristors - SCRs - Modules, Diodes - RF and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPB60R165CPATMA1 electronic components. IPB60R165CPATMA1 can be shipped within 24 hours after order. If you have any demands for IPB60R165CPATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB60R165CPATMA1 Product Attributes
Part Number :
IPB60R165CPATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 600V 21A D2PAK
Series :
CoolMOS™
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
165 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs :
52nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2000pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
192W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TO263-3-2
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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