[8765pcs Stock]
- Part Number:
- IRF8302MTR1PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N CH 30V 31A MX.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - JFETs, Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Arrays and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF8302MTR1PBF electronic components. IRF8302MTR1PBF can be shipped within 24 hours after order. If you have any demands for IRF8302MTR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF8302MTR1PBF Product Attributes
Part Number :
IRF8302MTR1PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N CH 30V 31A MX
Series :
HEXFET®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
31A (Ta), 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.8 mOhm @ 31A, 10V
Vgs(th) (Max) @ Id :
2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
53nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6030pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
2.8W (Ta), 104W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DIRECTFET™ MX
Package / Case :
DirectFET™ Isometric MX
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