[13181pcs Stock]
- Part Number:
- SPP12N50C3HKSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 560V 11.6A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays and Diodes - Rectifiers - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies SPP12N50C3HKSA1 electronic components. SPP12N50C3HKSA1 can be shipped within 24 hours after order. If you have any demands for SPP12N50C3HKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPP12N50C3HKSA1 Product Attributes
Part Number :
SPP12N50C3HKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 560V 11.6A TO-220
Series :
CoolMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
560V
Current - Continuous Drain (Id) @ 25°C :
11.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
380 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id :
3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs :
49nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO220-3-1
Package / Case :
TO-220-3
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