Part Number :
TPN4R712MD,L1Q
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET P-CH 20V 36A 8TSON ADV
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
4.7 mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id :
1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
65nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
4300pF @ 10V
Power Dissipation (Max) :
42W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-TSON Advance (3.3x3.3)
Package / Case :
8-PowerVDFN