STW56N65M2-4 Pricing (USD) [15114pcs Stock]
- 1 pcs$3.95749
- 10 pcs$3.56130
- 100 pcs$2.92814
- 500 pcs$2.45330
- 1,000 pcs$2.13675
- Part Number:
- STW56N65M2-4
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 650V I2PAKFP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in STMicroelectronics STW56N65M2-4 electronic components. STW56N65M2-4 can be shipped within 24 hours after order. If you have any demands for STW56N65M2-4, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STW56N65M2-4 Product Attributes
Part Number :
STW56N65M2-4
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 650V I2PAKFP
Series :
MDmesh™ M2
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
62 mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
93nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
3900pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
358W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247-4L
Package / Case :
TO-247-4
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