CSD19531Q5A Pricing (USD) [122851pcs Stock]
- 1 pcs$0.30107
- 2,500 pcs$0.29734
- Part Number:
- CSD19531Q5A
- Manufacturer:
- Texas Instruments
- Detailed description:
- MOSFET N-CH 100V 100A 8SON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs - Modules, Transistors - IGBTs - Arrays, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Transistors - JFETs, Diodes - RF and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Texas Instruments CSD19531Q5A electronic components. CSD19531Q5A can be shipped within 24 hours after order. If you have any demands for CSD19531Q5A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD19531Q5A Product Attributes
Part Number :
CSD19531Q5A
Manufacturer :
Texas Instruments
Description :
MOSFET N-CH 100V 100A 8SON
Series :
NexFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
6.4 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id :
3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
48nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3870pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
3.3W (Ta), 125W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-VSONP (5x6)
Package / Case :
8-PowerTDFN
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