[1219pcs Stock]
- Part Number:
- SSM3K303T(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 30V 2.9A TSM.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Diodes - Bridge Rectifiers, Diodes - Zener - Arrays, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Single and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage SSM3K303T(TE85L,F) electronic components. SSM3K303T(TE85L,F) can be shipped within 24 hours after order. If you have any demands for SSM3K303T(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3K303T(TE85L,F) Product Attributes
Part Number :
SSM3K303T(TE85L,F)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 30V 2.9A TSM
Series :
π-MOSVII
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4V, 10V
Rds On (Max) @ Id, Vgs :
83 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id :
2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
3.3nC @ 4V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
180pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
700mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TSM
Package / Case :
TO-236-3, SC-59, SOT-23-3
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