IXYS - IXFQ10N80P

KEY Part #: K6394744

IXFQ10N80P Pricing (USD) [33519pcs Stock]

  • 1 pcs$1.35927
  • 30 pcs$1.35251

Part Number:
IXFQ10N80P
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 800V 10A TO-3P.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Transistors - IGBTs - Modules and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in IXYS IXFQ10N80P electronic components. IXFQ10N80P can be shipped within 24 hours after order. If you have any demands for IXFQ10N80P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFQ10N80P Product Attributes

Part Number : IXFQ10N80P
Manufacturer : IXYS
Description : MOSFET N-CH 800V 10A TO-3P
Series : HiPerFET™, PolarHT™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.1 Ohm @ 5A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 40nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2050pF @ 25V
FET Feature : -
Power Dissipation (Max) : 300W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3