IXTY1R4N120PHV Pricing (USD) [41564pcs Stock]
- 1 pcs$0.94072
- Part Number:
- IXTY1R4N120PHV
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - Modules and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in IXYS IXTY1R4N120PHV electronic components. IXTY1R4N120PHV can be shipped within 24 hours after order. If you have any demands for IXTY1R4N120PHV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTY1R4N120PHV Product Attributes
Part Number :
IXTY1R4N120PHV
Manufacturer :
IXYS
Description :
MOSFET N-CH
Series :
Polar™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
13 Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id :
4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
24.8nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
666pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
86W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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