IXYS - IXFN50N120SK

KEY Part #: K6395234

IXFN50N120SK Pricing (USD) [1566pcs Stock]

  • 1 pcs$27.64233

Part Number:
IXFN50N120SK
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Arrays, Power Driver Modules, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Single and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in IXYS IXFN50N120SK electronic components. IXFN50N120SK can be shipped within 24 hours after order. If you have any demands for IXFN50N120SK, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN50N120SK Product Attributes

Part Number : IXFN50N120SK
Manufacturer : IXYS
Description : MOSFET N-CH
Series : -
Part Status : Active
FET Type : N-Channel
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 52 mOhm @ 40A, 20V
Vgs(th) (Max) @ Id : 2.8V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 115nC @ 20V
Vgs (Max) : +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds : 1895pF @ 1000V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 175°C (TJ)
Mounting Type : Chassis Mount
Supplier Device Package : SOT-227B
Package / Case : SOT-227-4, miniBLOC