Toshiba Semiconductor and Storage - TPN8R903NL,LQ

KEY Part #: K6421180

TPN8R903NL,LQ Pricing (USD) [379397pcs Stock]

  • 1 pcs$0.10778
  • 3,000 pcs$0.10724

Part Number:
TPN8R903NL,LQ
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 30V 20A TSON.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs, Transistors - IGBTs - Modules, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TPN8R903NL,LQ electronic components. TPN8R903NL,LQ can be shipped within 24 hours after order. If you have any demands for TPN8R903NL,LQ, Please submit a Request for Quotation here or send us an email:
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TPN8R903NL,LQ Product Attributes

Part Number : TPN8R903NL,LQ
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 30V 20A TSON
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 8.9 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 9.8nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 820pF @ 15V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 22W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN

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