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  5. NDD03N40Z-1G

ON Semiconductor - NDD03N40Z-1G

KEY Part #: K6402440

NDD03N40Z-1G Pricing (USD) [2703pcs Stock]

  • 1,950 pcs$0.10733
Part Number:
NDD03N40Z-1G
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 400V 2.1A IPAK-4.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Power Driver Modules, Thyristors - SCRs - Modules, Diodes - Rectifiers - Arrays, Thyristors - SCRs and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in ON Semiconductor NDD03N40Z-1G electronic components. NDD03N40Z-1G can be shipped within 24 hours after order. If you have any demands for NDD03N40Z-1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NDD03N40Z-1G Product Attributes

Part Number : NDD03N40Z-1G
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 400V 2.1A IPAK-4
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 400V
Current - Continuous Drain (Id) @ 25°C : 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.4 Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id : 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs : 6.6nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 140pF @ 50V
FET Feature : -
Power Dissipation (Max) : 37W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : IPAK (TO-251)
Package / Case : TO-251-3 Short Leads, IPak, TO-251AA

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