IXFH12N90 Pricing (USD) [7533pcs Stock]
- 1 pcs$6.32274
- 30 pcs$6.29129
- Part Number:
- IXFH12N90
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 900V 12A TO-247AD.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Zener - Arrays, Thyristors - DIACs, SIDACs, Diodes - RF, Transistors - Bipolar (BJT) - Single, Power Driver Modules, Diodes - Bridge Rectifiers and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in IXYS IXFH12N90 electronic components. IXFH12N90 can be shipped within 24 hours after order. If you have any demands for IXFH12N90, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH12N90 Product Attributes
Part Number :
IXFH12N90
Manufacturer :
IXYS
Description :
MOSFET N-CH 900V 12A TO-247AD
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
900V
Current - Continuous Drain (Id) @ 25°C :
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
900 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
300W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247AD (IXFH)
Package / Case :
TO-247-3
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