Infineon Technologies - IRFB17N20D

KEY Part #: K6414622

[12691pcs Stock]


    Part Number:
    IRFB17N20D
    Manufacturer:
    Infineon Technologies
    Detailed description:
    MOSFET N-CH 200V 16A TO-220AB.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - RF, Diodes - Zener - Single, Transistors - Programmable Unijunction, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs, Diodes - Rectifiers - Single and Transistors - IGBTs - Modules ...
    Competitive Advantage:
    We specialize in Infineon Technologies IRFB17N20D electronic components. IRFB17N20D can be shipped within 24 hours after order. If you have any demands for IRFB17N20D, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFB17N20D Product Attributes

    Part Number : IRFB17N20D
    Manufacturer : Infineon Technologies
    Description : MOSFET N-CH 200V 16A TO-220AB
    Series : HEXFET®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 200V
    Current - Continuous Drain (Id) @ 25°C : 16A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 170 mOhm @ 9.8A, 10V
    Vgs(th) (Max) @ Id : 5.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 50nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 1100pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 3.8W (Ta), 140W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-220AB
    Package / Case : TO-220-3

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