Diodes Incorporated - DMTH6004SPSQ-13

KEY Part #: K6403593

DMTH6004SPSQ-13 Pricing (USD) [79288pcs Stock]

  • 1 pcs$0.49315
  • 2,500 pcs$0.43461

Part Number:
DMTH6004SPSQ-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 60V 100A PWRDI5060-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Power Driver Modules, Diodes - Rectifiers - Single and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Diodes Incorporated DMTH6004SPSQ-13 electronic components. DMTH6004SPSQ-13 can be shipped within 24 hours after order. If you have any demands for DMTH6004SPSQ-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMTH6004SPSQ-13 Product Attributes

Part Number : DMTH6004SPSQ-13
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 60V 100A PWRDI5060-8
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 25A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.1 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 95.4nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4556pF @ 30V
FET Feature : -
Power Dissipation (Max) : 2.1W (Ta), 167W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerDI5060-8
Package / Case : 8-PowerTDFN