ON Semiconductor - FDD6612A

KEY Part #: K6403516

FDD6612A Pricing (USD) [239465pcs Stock]

  • 1 pcs$0.15523
  • 2,500 pcs$0.15446

Part Number:
FDD6612A
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 30V 9.5A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - TRIACs, Thyristors - SCRs, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in ON Semiconductor FDD6612A electronic components. FDD6612A can be shipped within 24 hours after order. If you have any demands for FDD6612A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDD6612A Product Attributes

Part Number : FDD6612A
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 30V 9.5A DPAK
Series : PowerTrench®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 9.5A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 20 mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9.4nC @ 5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2.8W (Ta), 36W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-PAK (TO-252)
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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