BSP135H6327XTSA1 Pricing (USD) [140794pcs Stock]
- 1 pcs$0.26271
- 1,000 pcs$0.23558
- Part Number:
- BSP135H6327XTSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 600V 120MA SOT-223.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Single, Diodes - Bridge Rectifiers, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules and Diodes - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies BSP135H6327XTSA1 electronic components. BSP135H6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSP135H6327XTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSP135H6327XTSA1 Product Attributes
Part Number :
BSP135H6327XTSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 600V 120MA SOT-223
Series :
SIPMOS®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
0V, 10V
Rds On (Max) @ Id, Vgs :
45 Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id :
1V @ 94µA
Gate Charge (Qg) (Max) @ Vgs :
4.9nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
146pF @ 25V
FET Feature :
Depletion Mode
Power Dissipation (Max) :
1.8W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-223-4
Package / Case :
TO-261-4, TO-261AA
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