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  5. ATP112-TL-H

ON Semiconductor - ATP112-TL-H

KEY Part #: K6393227

ATP112-TL-H Pricing (USD) [234382pcs Stock]

  • 1 pcs$0.15781
  • 3,000 pcs$0.13266
Part Number:
ATP112-TL-H
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET P-CH 60V 25A ATPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Single, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays and Diodes - RF ...
Competitive Advantage:
We specialize in ON Semiconductor ATP112-TL-H electronic components. ATP112-TL-H can be shipped within 24 hours after order. If you have any demands for ATP112-TL-H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ATP112-TL-H Product Attributes

Part Number : ATP112-TL-H
Manufacturer : ON Semiconductor
Description : MOSFET P-CH 60V 25A ATPAK
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 43 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 33.5nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1450pF @ 20V
FET Feature : -
Power Dissipation (Max) : 40W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : ATPAK
Package / Case : ATPAK (2 leads+tab)

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