[1278pcs Stock]
- Part Number:
- IRFH6200TR2PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 20V 100A 5X6 PQFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Arrays and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFH6200TR2PBF electronic components. IRFH6200TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFH6200TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH6200TR2PBF Product Attributes
Part Number :
IRFH6200TR2PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 20V 100A 5X6 PQFN
Series :
HEXFET®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
49A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 10V
Rds On (Max) @ Id, Vgs :
0.95 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id :
1.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
230nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
10890pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
3.6W (Ta), 156W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-PQFN (5x6)
Package / Case :
8-PowerVDFN
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