Infineon Technologies - IRF3710PBF

KEY Part #: K6399950

IRF3710PBF Pricing (USD) [57024pcs Stock]

  • 1 pcs$0.71495
  • 10 pcs$0.63300
  • 100 pcs$0.50017
  • 500 pcs$0.38790
  • 1,000 pcs$0.28968

Part Number:
IRF3710PBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 100V 57A TO-220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - Special Purpose, Thyristors - SCRs - Modules and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Infineon Technologies IRF3710PBF electronic components. IRF3710PBF can be shipped within 24 hours after order. If you have any demands for IRF3710PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF3710PBF Product Attributes

Part Number : IRF3710PBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 100V 57A TO-220AB
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 23 mOhm @ 28A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 130nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3130pF @ 25V
FET Feature : -
Power Dissipation (Max) : 200W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3

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