Part Number :
IPD60R750E6ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 600V 5.7A TO252
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
750 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs :
17.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
373pF @ 100V
Power Dissipation (Max) :
48W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TO252-3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63