Vishay Siliconix - SQM40010EL_GE3

KEY Part #: K6418159

SQM40010EL_GE3 Pricing (USD) [53470pcs Stock]

  • 1 pcs$0.73126
  • 800 pcs$0.69323

Part Number:
SQM40010EL_GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 40V 120A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Thyristors - SCRs, Thyristors - TRIACs, Thyristors - SCRs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modules and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Vishay Siliconix SQM40010EL_GE3 electronic components. SQM40010EL_GE3 can be shipped within 24 hours after order. If you have any demands for SQM40010EL_GE3, Please submit a Request for Quotation here or send us an email:
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ISO-9001-2015
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ISO-28000-2007
ISO-45001-2018

SQM40010EL_GE3 Product Attributes

Part Number : SQM40010EL_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 40V 120A D2PAK
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.6 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 230nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 17100pF @ 20V
FET Feature : -
Power Dissipation (Max) : 375W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D²PAK (TO-263)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB