Diodes Incorporated - DMN1054UCB4-7

KEY Part #: K6405069

DMN1054UCB4-7 Pricing (USD) [325631pcs Stock]

  • 1 pcs$0.11359
  • 3,000 pcs$0.10093

Part Number:
DMN1054UCB4-7
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 8V 2.7A X1-WLB0808-4.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Arrays and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in Diodes Incorporated DMN1054UCB4-7 electronic components. DMN1054UCB4-7 can be shipped within 24 hours after order. If you have any demands for DMN1054UCB4-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN1054UCB4-7 Product Attributes

Part Number : DMN1054UCB4-7
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 8V 2.7A X1-WLB0808-4
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 8V
Current - Continuous Drain (Id) @ 25°C : 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.2V, 4.5V
Rds On (Max) @ Id, Vgs : 42 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 4.5V
Vgs (Max) : ±5V
Input Capacitance (Ciss) (Max) @ Vds : 908pF @ 6V
FET Feature : -
Power Dissipation (Max) : 740mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : X1-WLB0808-4
Package / Case : 4-XFBGA, WLBGA