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  5. NTMFS5H615NLT1G

ON Semiconductor - NTMFS5H615NLT1G

KEY Part #: K6418485

NTMFS5H615NLT1G Pricing (USD) [65278pcs Stock]

  • 1 pcs$0.59898
Part Number:
NTMFS5H615NLT1G
Manufacturer:
ON Semiconductor
Detailed description:
T8 60V LOW COSS.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs - Modules, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Arrays, Thyristors - TRIACs and Transistors - JFETs ...
Competitive Advantage:
We specialize in ON Semiconductor NTMFS5H615NLT1G electronic components. NTMFS5H615NLT1G can be shipped within 24 hours after order. If you have any demands for NTMFS5H615NLT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTMFS5H615NLT1G Product Attributes

Part Number : NTMFS5H615NLT1G
Manufacturer : ON Semiconductor
Description : T8 60V LOW COSS
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 28A (Ta), 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.8 mOhm @ 49A, 10V
Vgs(th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 63nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4860pF @ 30V
FET Feature : -
Power Dissipation (Max) : 3.2W (Ta), 139W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 5-DFN (5x6) (8-SOFL)
Package / Case : 8-PowerTDFN, 5 Leads

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