Infineon Technologies - IRFR1018ETRPBF

KEY Part #: K6418543

IRFR1018ETRPBF Pricing (USD) [121753pcs Stock]

  • 1 pcs$0.30379
  • 2,000 pcs$0.27043

Part Number:
IRFR1018ETRPBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 60V 56A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Arrays, Thyristors - SCRs, Diodes - Rectifiers - Arrays, Thyristors - SCRs - Modules, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies IRFR1018ETRPBF electronic components. IRFR1018ETRPBF can be shipped within 24 hours after order. If you have any demands for IRFR1018ETRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFR1018ETRPBF Product Attributes

Part Number : IRFR1018ETRPBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 60V 56A DPAK
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 8.4 mOhm @ 47A, 10V
Vgs(th) (Max) @ Id : 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 69nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2290pF @ 50V
FET Feature : -
Power Dissipation (Max) : 110W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-Pak
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63