Toshiba Semiconductor and Storage - TK72E12N1,S1X

KEY Part #: K6418054

TK72E12N1,S1X Pricing (USD) [50279pcs Stock]

  • 1 pcs$0.85971
  • 50 pcs$0.85543

Part Number:
TK72E12N1,S1X
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N CH 120V 72A TO-220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Programmable Unijunction, Power Driver Modules, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK72E12N1,S1X electronic components. TK72E12N1,S1X can be shipped within 24 hours after order. If you have any demands for TK72E12N1,S1X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK72E12N1,S1X Product Attributes

Part Number : TK72E12N1,S1X
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N CH 120V 72A TO-220
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 120V
Current - Continuous Drain (Id) @ 25°C : 72A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 36A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 130nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 8100pF @ 60V
FET Feature : -
Power Dissipation (Max) : 255W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3
Package / Case : TO-220-3

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