Infineon Technologies - IRFB3256PBF

KEY Part #: K6418295

IRFB3256PBF Pricing (USD) [58319pcs Stock]

  • 1 pcs$0.67047
  • 1,000 pcs$0.66660

Part Number:
IRFB3256PBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N CH 60V 75A TO-220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Power Driver Modules, Thyristors - SCRs - Modules, Transistors - Special Purpose, Thyristors - SCRs, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Arrays and Diodes - RF ...
Competitive Advantage:
We specialize in Infineon Technologies IRFB3256PBF electronic components. IRFB3256PBF can be shipped within 24 hours after order. If you have any demands for IRFB3256PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFB3256PBF Product Attributes

Part Number : IRFB3256PBF
Manufacturer : Infineon Technologies
Description : MOSFET N CH 60V 75A TO-220AB
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.4 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id : 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs : 195nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6600pF @ 48V
FET Feature : -
Power Dissipation (Max) : 300W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3

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