Rohm Semiconductor - RDN080N25FU6

KEY Part #: K6407335

[1009pcs Stock]


    Part Number:
    RDN080N25FU6
    Manufacturer:
    Rohm Semiconductor
    Detailed description:
    MOSFET N-CH 250V 8A TO220FN.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - JFETs, Transistors - Programmable Unijunction, Transistors - IGBTs - Single, Diodes - Bridge Rectifiers, Thyristors - TRIACs, Transistors - Bipolar (BJT) - RF and Diodes - Rectifiers - Single ...
    Competitive Advantage:
    We specialize in Rohm Semiconductor RDN080N25FU6 electronic components. RDN080N25FU6 can be shipped within 24 hours after order. If you have any demands for RDN080N25FU6, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RDN080N25FU6 Product Attributes

    Part Number : RDN080N25FU6
    Manufacturer : Rohm Semiconductor
    Description : MOSFET N-CH 250V 8A TO220FN
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 250V
    Current - Continuous Drain (Id) @ 25°C : 8A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 500 mOhm @ 4A, 10V
    Vgs(th) (Max) @ Id : 4V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 543pF @ 10V
    FET Feature : -
    Power Dissipation (Max) : 35W (Tc)
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-220FN
    Package / Case : TO-220-3 Full Pack

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