SSM3K2615R,LF Pricing (USD) [603363pcs Stock]
- 1 pcs$0.06777
- 3,000 pcs$0.06743
- Part Number:
- SSM3K2615R,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 60V 2A SOT23.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - FETs, MOSFETs - Arrays, Thyristors - TRIACs, Thyristors - SCRs - Modules, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Power Driver Modules and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage SSM3K2615R,LF electronic components. SSM3K2615R,LF can be shipped within 24 hours after order. If you have any demands for SSM3K2615R,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3K2615R,LF Product Attributes
Part Number :
SSM3K2615R,LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 60V 2A SOT23
Series :
π-MOSV
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
3.3V, 10V
Rds On (Max) @ Id, Vgs :
300 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id :
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
150pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
1W (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23F
Package / Case :
SOT-23-3 Flat Leads
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